发明名称 |
Deposited Material and Method of Formation |
摘要 |
A system and method for manufacturing a semiconductor device is provided. An embodiment comprises forming a deposited layer using an atomic layer deposition (ALD) process. The ALD process may utilize a first precursor for a first time period, a first purge for a second time period longer than the first time period, a second precursor for a third time period longer than the first time period, and a second purge for a fourth time period longer than the third time period.
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申请公布号 |
US2013093048(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201113275021 |
申请日期 |
2011.10.17 |
申请人 |
CHANG YAO-WEN;TSAI CHENG-YUAN;LIN HSING-LIEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG YAO-WEN;TSAI CHENG-YUAN;LIN HSING-LIEN |
分类号 |
H01L29/92;H01L21/02 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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