发明名称 |
REPLACEMENT GATE MULTIGATE TRANSISTOR FOR EMBEDDED DRAM |
摘要 |
A memory cell, an array of memory cells, and a method for fabricating a memory cell with multigate transistors such as fully depleted finFET or nano-wire transistors in embedded DRAM. The memory cell includes a trench capacitor, a non-planar transistor, and a self-aligned silicide interconnect electrically coupling the trench capacitor to the non-planar transistor. |
申请公布号 |
US2013092992(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201113274758 |
申请日期 |
2011.10.17 |
申请人 |
CHANG JOSEPHINE B.;CHANG LELAND;GUILLORN MICHAEL A.;HAENSCH WILFRIED E.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE B.;CHANG LELAND;GUILLORN MICHAEL A.;HAENSCH WILFRIED E. |
分类号 |
H01L27/108;B82Y99/00;H01L21/02 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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