发明名称 POST-WRITE READ IN NON-VOLATILE MEMORIES USING COMPARISON OF DATA AS WRITTEN IN BINARY AND MULTI-STATE FORMATS
摘要 Techniques for a post-write read are presented. In an exemplary embodiment, host data is initially written into the non-volatile memory in binary form, such as a non-volatile binary cache. It is then subsequently written from the binary section (410) into a multi-state nonvolatile section (420) of the memory. After being written in multi-state format, pages of data from a multi-state block can then be checked against there source pages in the binary section to verify the quality of the multi-state write. This process can be performed on the memory device itself, without transferring the pages out to the controller.
申请公布号 WO2013016397(A3) 申请公布日期 2013.04.18
申请号 WO2012US48087 申请日期 2012.07.25
申请人 SANDISK TECHNOLOGIES INC.;SHARON, ERAN;ALROD, IDAN 发明人 SHARON, ERAN;ALROD, IDAN
分类号 G11C16/34;G06F11/10;G11C11/56 主分类号 G11C16/34
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