发明名称 |
POST-WRITE READ IN NON-VOLATILE MEMORIES USING COMPARISON OF DATA AS WRITTEN IN BINARY AND MULTI-STATE FORMATS |
摘要 |
Techniques for a post-write read are presented. In an exemplary embodiment, host data is initially written into the non-volatile memory in binary form, such as a non-volatile binary cache. It is then subsequently written from the binary section (410) into a multi-state nonvolatile section (420) of the memory. After being written in multi-state format, pages of data from a multi-state block can then be checked against there source pages in the binary section to verify the quality of the multi-state write. This process can be performed on the memory device itself, without transferring the pages out to the controller. |
申请公布号 |
WO2013016397(A3) |
申请公布日期 |
2013.04.18 |
申请号 |
WO2012US48087 |
申请日期 |
2012.07.25 |
申请人 |
SANDISK TECHNOLOGIES INC.;SHARON, ERAN;ALROD, IDAN |
发明人 |
SHARON, ERAN;ALROD, IDAN |
分类号 |
G11C16/34;G06F11/10;G11C11/56 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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