Method for conversion of X-rays with directly changing semiconductor layer, involves adjusting intensity profile of infrared radiation so that intensity of radiation is decreased from surface over thickness of semiconductor layer

摘要

The method involves extending surface (6) and lateral boundary surfaces (7) across the thickness of the semiconductor layer (4). The X-rays (5) is radiated to the surface of the semiconductor layer while lateral boundary surface of the semiconductor layer is irradiated with infrared radiation (3). The intensity profile (10,11) of infrared radiation is adjusted so that the intensity of infrared radiation is decreased from the surface over the thickness of the semiconductor layer. An independent claim is included for device for conversion of X-rays with directly changing semiconductor layer.