| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition and a method for forming a resist pattern. <P>SOLUTION: The resist composition is used in the following step (1) of a method for forming a resist pattern. The method includes steps of: (1) forming a resist film by applying on a support body a resist composition, which comprises a base component (A) showing increase in solubility in an alkali developing solution by an action of an acid, a photo-base generator component (C) generating a base by exposure, an acidic compound component (G), and an amine (D); (2) exposing the resist film; (3) baking the resist film to neutralize the base generated from the photo-base generator component (C) with the acidic compound component (G) in an exposed portion and to increase the solubility of the base component (A) in an alkali developing solution by an action of the acidic compound component (G) in an unexposed portion; and (4) forming a negative resist pattern by developing the resist film with an alkali to dissolve and eliminate the unexposed portion. The resist composition contains 1 mol or more of the amine (D) to 1 mol of the acidic compound component (G). <P>COPYRIGHT: (C)2013,JPO&INPIT |
