| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetic storage element and a nonvolatile storage device which are capable of a stable operation. <P>SOLUTION: According to an embodiment, a magnetic storage element includes first and second lamination parts. The first laminate part includes a first ferromagnetic layer, a first non-magnetic layer and a second ferromagnetic layer. The first ferromagnetic layer has magnetization fixed to a direction perpendicular to a surface and the second ferromagnetic layer has a magnetization direction variable to a direction perpendicular to the surface. The second lamination part includes a third ferromagnetic layer, a second non-magnetic layer and a fourth ferromagnetic layer. The third ferromagnetic layer has a magnetization direction variable to an in-plane direction and the fourth ferromagnetic layer has magnetization fixed to a direction perpendicular to the surface. A leak field Hs from the first, second and fourth ferromagnetic layers at a position of the third ferromagnetic layer, magnetic anisotropy Ku, damping constants α, magnetization Ms and a demagnetization factor Nz of the third ferromagnetic layer satisfy the following relational expression: Ku≤αMs(8πNzMs-Hs). A spin polarized electron and a revolving magnetic field generated in the third ferromagnetic layer act on the second ferromagnetic layer thereby to determine a magnetization direction of the second ferromagnetic layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
