| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile programmable logic switch that prevents a breakdown of a gate insulating film of a pass transistor during selective memory writing and implements a thin gate insulating film of the pass transistor at the same time, and keeps writing efficiency intact despite memory miniaturization. <P>SOLUTION: The nonvolatile programmable logic switch includes a first cell and a second cell each including: a first memory having a first terminal, a second terminal and a third terminal for receiving a control signal to control a memory state; a first transistor connected at either a source or a drain to the second terminal; and a second transistor connected at a gate to the other of the source and drain of the first transistor. The third terminal of the first memory in the first cell and the third terminal of the first memory in the second cell are connected in common. For writing to the first cell, the third terminals are connected to a writing power supply, the first terminal in the first cell is connected to a ground power supply, and the first terminal in the second memory is connected to a write-inhibiting power supply. <P>COPYRIGHT: (C)2013,JPO&INPIT |
