| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching apparatus which can process both sides of material to be etched by efficiently applying a bias to both faces of the material to be etched regardless of material of a substrate, when performing plasma processing to both faces of the material to be etched such as a magnetic recording medium, and to provide a method for the plasma etching. <P>SOLUTION: In a plasma etching apparatus which comprises a pair of conductors for applying high-frequency power to approximately annular material to be etched, and etches both faces of the approximately annular material to be etched by sandwiching an inside edge of the approximately annular material to be etched with the pair of conductors, this plasma etching apparatus makes both faces of the approximately annular material to be etched electrically conduct, by using conductor-connecting member installed in one of the pair of the conductors. <P>COPYRIGHT: (C)2013,JPO&INPIT |
