发明名称 ETCHANT COMPOSITION FOR ETCHING A CONDUCTIVE MULTI-LAYER FILM AND ETCHING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an etchant composition which can efficiently, excellently, simultaneously and collectively etch a multiple film including a copper layer comprises one or more layers of copper or copper alloy such as a Cu/Mo laminated metal film, a Cu/Mo alloy laminated metal film and a Cu alloy/Mo alloy laminated metal film, and a molybdenum layer comprises one or more layers of molybdenum or molybdenum alloy, and to provide a etching method for the multiple film using the same. SOLUTION: The etchant composition contains 50-80 wt.% of phosphoric acid, 0.5-10 wt.% of nitric acid, 5-30 wt.% of acetic acid, 0.01-5 wt.% of imidazole with respect to the total weight, and the balance water. The imidazole as an additive functions as a copper/molybdenum galvanic reaction controller. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 KR101256276(B1) 申请公布日期 2013.04.18
申请号 KR20100082460 申请日期 2010.08.25
申请人 发明人
分类号 C23F1/02;C23F1/18;C23F1/26;C23F1/30 主分类号 C23F1/02
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