| 摘要 |
1,052,449. Semi-conductor devices. ALLM€NNA SVENSKA ELEKTRISKA A.B. Oct. 11, 1963 [Oct. 15, 1962], No. 40143/63. Heading H1K. A device e.g. diode, transistor or thyristor comprises a semi-conductor wafer alloyed or soldered to one face of a larger carrier plate the other face of which is in pressure contact with a cooling body. The carrier plate is of a material with a thermal expansion coefficient within 50% of that of the wafer. In a typical diode (Fig. 1) the wafer is of P-type silicon and is bonded to carrier plate 11 and electrode 13 by aluminium and gold-antimony respectively. Suitable carrier plate materials for silicon or germanium wafers are tungsten, molybdenum, chromium, tantalum, and specified iron-nickel and iron-nickel cobalt alloys. Sintered tungsten or molybdenum, with or without copper as binder, are preferred. Ceramic ring 14 is attached to the carrier plate 11 via a fernico ring 17 which is silver-soldered to the ring and gold-tin soldered to the plate. The plate is clamped to the finned copper aluminium or silumin body 21 as indicated, by an internally threaded clamping ring engaging a thread on the body, or by being itself screwed into a threaded hole in the body. |
