SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor memory device and a semiconductor device are provided to increase a read output speed by preventing an interference current from an unselected memory cell from being mixed with a current flowing in a selected memory cell. CONSTITUTION: A write circuit(22) performs a set operation to decrease an electrical resistance of a variable resistor by making a current flow from one side to the other side of a memory cell via the variable resistor and performs a reset operation to increase the electrical resistance of the variable resistor by making the current flow from the other side to one side of the memory cell via the variable resistor. A read output circuit(21) performs a first read output operation to read and output the resistance state of the variable resistor by making the current flow from one side to the other side of the memory cell via the variable resistor and performs a second read output operation to read and output the resistance state of the variable resistor by making the current flow from the other side to one side of the memory cell via the variable resistor. [Reference numerals] (42) Data register; (46) Determination register; (47) Writer register;