发明名称 Electronic device encapsulation structure and method for making such a structure
摘要 <p>The structure (200) has a first cavity (206) bounded by a support (104) i.e. semi-conductor wafer, and a cap (208) placed on the support. An aperture (210) passes through the cap and communicates an inside of the first cavity with a portion of getter material (218d) provided in a second cavity (215). The second cavity is arranged on the support and placed adjacent to the first cavity. A part of the portion of getter material is provided on the support or against an outer side wall of the first cavity. The first cavity and the second cavity together form a hermetically sealed volume. An independent claim is also included for a method for manufacturing a structure for encapsulating an electronic device.</p>
申请公布号 EP2581339(A2) 申请公布日期 2013.04.17
申请号 EP20120187748 申请日期 2012.10.09
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 PRONIN, JEAN-LOUIS;DUMONT, GEOFFROY
分类号 B81C1/00 主分类号 B81C1/00
代理机构 代理人
主权项
地址