THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A thin film transistor array panel and a manufacturing method thereof are provided to form a first contact hole, a second contact hole, a source electrode, and a drain electrode using one mask, thereby preventing disconnection between a semiconductor layer and a source and a drain electrode due to the misalignment of a mask. CONSTITUTION: A semiconductor layer(150) is formed on a substrate(110). The semiconductor layer includes a source region(152), a drain region(154), and a channel region(156). A gate electrode(124) is overlapped with the channel region of the semiconductor layer on a first insulating layer(114). A first contact hole(146) and a second contact hole(148) are formed on the first insulating layer and a second insulating layer(140). A source electrode(173) is formed on the second insulating layer to surround the first contact hole. A drain electrode(175) is formed on the second insulating layer to surround the second contact hole.