发明名称 |
CMOS image sensor with a special MOS transistor |
摘要 |
<p>A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.</p> |
申请公布号 |
EP2270863(A3) |
申请公布日期 |
2013.04.17 |
申请号 |
EP20100184067 |
申请日期 |
2003.06.26 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SHINOHARA, MAHITO;INOUE, SHUNSUKE |
分类号 |
H01L27/146;H04N5/335;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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