发明名称 |
WRITE AND ERASE SCHEME FOR RESISTIVE MEMORY DEVICE |
摘要 |
<p>A method for programming a two terminal resistive memory device, the method includes applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell; and stopping the applying of the bias voltage if the measured current is equal to or greater than a predetermined value.</p> |
申请公布号 |
EP2580760(A2) |
申请公布日期 |
2013.04.17 |
申请号 |
EP20110796307 |
申请日期 |
2011.06.14 |
申请人 |
CROSSBAR, INC. |
发明人 |
NAZARIAN, HAGOP;JO, SUNG, HYUN |
分类号 |
G11C13/00;G11C16/10;G11C16/14;G11C16/34 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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