| 摘要 |
A method for processing a substrate is provided to improve the thickness uniformity of a thin film by adjusting a gap between the substrate and a gas nozzle for spraying gas with an elevation member. A chamber(100) provides a space. A substrate supporter(200) is installed in the chamber. A substrate is placed on the substrate supporter. An elevation member(220) is coupled to a lower of the substrate supporter and performs an elevation movement of the substrate supporter. A plasma generating source(400) generates plasma in the chamber. A gas spraying unit(300) is installed on an upper of the substrate supporter to spray reactive gas. The substrate supporter is raised to approach the substrate to the gas spraying unit. The substrate supporter is stopped, and then a deposition process is performed on the substrate. After the deposition process is completed, the substrate supporter is fallen to separate the substrate from the gas spraying unit. After the substrate supporter is stopped, an etching process is performed on the substrate. |
