发明名称 |
Semiconductor device structure and manufacturing method thereof |
摘要 |
Provided is a manufacturing method of a semiconductor device structure. The method comprises: forming at least one gate line (3005) on a semiconductor substrate (3000); forming a gate side wall (3006) around the gate line (3005); forming a source/drain region (3007) at two sides of the gate line (3005) in the semiconductor substrate (3000); forming a conducting side wall (3009) around an external side of the gate side wall (3006); and implementing isolation of devices at a preset area, the isolated gate line part forming a gate (3011) of a corresponding unit device, and the isolated conducting side wall part forming a contact portion of the corresponding unit device. Also provided is a semiconductor device structure. The present invention is applicable to the manufacturing of a contact portion in an integrated circuit.
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申请公布号 |
GB2495347(A8) |
申请公布日期 |
2013.04.17 |
申请号 |
GB20120002438 |
申请日期 |
2011.08.10 |
申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
HUICAI ZHONG;QINGQING LIANG;HAIZHOU YIN |
分类号 |
H01L21/336;H01L27/088;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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