发明名称
摘要 An organic EL element section (1000) is formed on a circuit formation section (102) formed on a circuit board (101). The organic EL element section (1000) is covered with a protective layer (113) including an SiNxOy film. The SiNxOy film has infrared absorption characteristics including: an Si—O—Si stretching vibration absorption peak appearing at energy lower than 1,000 cm−1; an absorption intensity of an Si—N stretching vibration absorption peak appearing in the vicinity of around 870 cm−1 which is 0.75 or more times an absorption intensity of the Si—O—Si stretching vibration absorption peak; and an absorption peak intensity in a range of 2,000 to 4,000 cm−1, which is 5% or less of the absorption intensity of the Si—N stretching vibration absorption peak. Thus, the protective film having an excellent moisture-blocking property may be obtained, and life property of an organic EL display device may be improved.
申请公布号 JP5185598(B2) 申请公布日期 2013.04.17
申请号 JP20070288956 申请日期 2007.11.06
申请人 发明人
分类号 H05B33/04;G09F9/30;H01L27/32;H01L51/50;H05B33/10 主分类号 H05B33/04
代理机构 代理人
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