| 摘要 |
<p>Provided is a method for fabricating the III-nitride semiconductor laser, which can improve the flatness of the cavity mirrors in the III-nitride semiconductor laser device and which can reduce the threshold current. The substrate product SP is mounted on the support device 71 so that the orientation of the scribed groove 65a of the substrate product SP1 is aligned with the extending direction of the edges 71b of the support device 71. The substrate product SP is divided into the first region 70a, second region 70b, and third region 70c with respect to reference lines (X-coordinates A1, B1) extending along the edges 71b. The breakup of the substrate product SP is brought about by press along the press line in the central region 70c of the substrate product SP while supporting the two-side regions 70a, 70b of the substrate product SP, thereby forming the other substrate product SP1 and the laser bar LB1. The blade 69 is pressed at the position apart from a center line CNT, defined as a center between the edges 71 b, 71d of the support surfaces 71 a, 71 c, by the distance SHFT.</p> |
