发明名称 |
Magnetic random access memory |
摘要 |
A device includes a magnetic tunnel junction (MTJ) structure and a cap layer in contact with the MTJ structure. The device also includes a spin-on material layer in contact with a sidewall portion of the cap layer and a conducting layer in contact with at least the spin-on material layer and a portion of the MTJ structure. The cap layer has been etched to expose a portion of an electrode contact layer of the MTJ structure. The conducting layer is in electrical contact with the exposed portion of the electrode contact layer of the MTJ structure. |
申请公布号 |
US8421137(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US20100769353 |
申请日期 |
2010.04.28 |
申请人 |
LI XIA;KANG SEUNG H.;ZHU XIAOCHUN;QUALCOMM INCORPORATED |
发明人 |
LI XIA;KANG SEUNG H.;ZHU XIAOCHUN |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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