发明名称 Insulating substrate for semiconductor apparatus, semiconductor apparatus, and method for manufacturing semiconductor apparatus
摘要 The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.
申请公布号 US8421076(B2) 申请公布日期 2013.04.16
申请号 US20080674560 申请日期 2008.09.08
申请人 TAKEI MICHIKO;MATSUMOTO SHIN;TOMIYASU KAZUHIDE;FUKUSHIMA YASUMORI;TAKAFUJI YUTAKA;SHARP KABUSHIKI KAISHA 发明人 TAKEI MICHIKO;MATSUMOTO SHIN;TOMIYASU KAZUHIDE;FUKUSHIMA YASUMORI;TAKAFUJI YUTAKA
分类号 H01L29/72 主分类号 H01L29/72
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