发明名称 Integrated circuit with memory built-in self test (MBIST) circuitry having enhanced features and methods
摘要 Integrated circuits with memory built-in self test (MBIST) circuitry and methods are disclosed that employ enhanced features. In one aspect of the invention, an integrated circuit is provided having MIBST circuitry configured to serially test multiple arrays of memory elements within a component of the integrated circuit and to also conduct parallel initialization of the serially tested arrays. In another aspect of the invention, the MBST circuitry is used set the memory elements of the arrays to a first state and then to an inverse state during a burn-in operation to maintain each of the two opposing states for a desired time in order to either force a failure of the integrated circuit component or produce a pre-stressed component beyond an infancy stage.
申请公布号 US8423846(B2) 申请公布日期 2013.04.16
申请号 US20100883441 申请日期 2010.09.16
申请人 CHEN WEI-YU;BADGETT KEVIN;HESSEE KAY;ADVANCED MICRO DEVICES, INC. 发明人 CHEN WEI-YU;BADGETT KEVIN;HESSEE KAY
分类号 G01R31/28 主分类号 G01R31/28
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