发明名称 Semiconductor device with deviation compensation and method for fabricating the same
摘要 A semiconductor device includes a conductive pattern formed on a substrate, a conductive land formed to come into contact with at least part of the top surface of the conductive pattern, and a conductive section formed on the conductive land. The conductive section is electrically connected through the conductive land to the conductive pattern.
申请公布号 US8421125(B2) 申请公布日期 2013.04.16
申请号 US201213415493 申请日期 2012.03.08
申请人 TAMARU MASAKI;PANSONIC CORPORATION 发明人 TAMARU MASAKI
分类号 H01L27/118;H01L21/70;H01L23/48;H01L23/52;H01L27/088;H01L29/40 主分类号 H01L27/118
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