发明名称 |
Semiconductor device with deviation compensation and method for fabricating the same |
摘要 |
A semiconductor device includes a conductive pattern formed on a substrate, a conductive land formed to come into contact with at least part of the top surface of the conductive pattern, and a conductive section formed on the conductive land. The conductive section is electrically connected through the conductive land to the conductive pattern. |
申请公布号 |
US8421125(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US201213415493 |
申请日期 |
2012.03.08 |
申请人 |
TAMARU MASAKI;PANSONIC CORPORATION |
发明人 |
TAMARU MASAKI |
分类号 |
H01L27/118;H01L21/70;H01L23/48;H01L23/52;H01L27/088;H01L29/40 |
主分类号 |
H01L27/118 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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