发明名称 |
Test structure for charged particle beam inspection and method for defect determination using the same |
摘要 |
A test structure and method thereof for determining a defect in a sample of semiconductor device includes at least one transistor rendered grounded. The grounded transistor is preferably located at at least one end of a test pattern designed to be included in the sample. When the test structure is inspected by charged particle beam inspection, the voltage contrast (VC) of the transistors in the test pattern including the grounded transistor is observed for determination of the presence of defect in the sample. |
申请公布号 |
US8421009(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US20090420224 |
申请日期 |
2009.04.08 |
申请人 |
XIAO HONG;HERMES MICROVISION, INC. |
发明人 |
XIAO HONG |
分类号 |
G01N23/00 |
主分类号 |
G01N23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|