| 摘要 |
A new class of electronic devices suitable for Si IC incorporation and of diverse utility are described. The devices are useful for many sensing applications as well as for special circuit applications. Sensing applications include chemical and biochemical sensing, photo detection (UV, visible, IR and FIR), magnetic field sensing, electric field sensing, and force sensing. The devices are MEMs compatible. Sensor sensitivity is voltage and current tunable over a wide range. The devices further constitute a new and useful class of IC reference voltage devices. Selective non linear features are also achievable in support of non-linear device applications. These unique devices may be considered as distributed merged bipolar and FET structures. The new distributed channel bipolar devices (DCBDs) have a channel of a selected shape formed in a surface of a substrate by doping or by influencing of a coating. In the device structure, the channel acts as an NPN or PNO BJT collector or emitter.
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