发明名称 |
Method for fabricating a gate dielectric layer and for fabricating a gate structure |
摘要 |
A method for fabricating a gate dielectric layer comprises the steps of: forming a dielectric layer on a semiconductor substrate; performing a nitrogen treating process to form a nitride layer on the dielectric layer; and performing a thermal treating process at 1150-1400° C. for a period of 400-800 milliseconds, to form a gate dielectric layer. A step of forming a gate layer on the gate dielectric layer may be performed to form a gate structure.
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申请公布号 |
US8420477(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US201113095291 |
申请日期 |
2011.04.27 |
申请人 |
SU KUO HUI;CHEN YI NAN;LIU HSIEN WEN;NANYA TECHNOLOGY CORPORATION |
发明人 |
SU KUO HUI;CHEN YI NAN;LIU HSIEN WEN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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