| 摘要 |
The present invention provides a method for producing an n-type Group III nitride semiconductor product having a high Si concentration and exhibiting favorable crystallinity. In the production method, specifically, an AlN buffer layer is formed on a sapphire substrate by MOCVD, and then a first layer (thickness: 2 μm) is formed from undoped GaN on the buffer layer by MOCVD at 1,140° C. Subsequently, a second layer (thickness: 200 nm) is formed from SiO2 on the first layer by plasma CVD, and then the second layer is removed by use of BHF (buffered hydrofluoric acid). Next, a GaN layer (thickness: 50 nm) is grown, by MOCVD at 1,140° C., on the first layer exposed by removal of the second layer without supply of an n-type dopant gas. Thus, on the first layer is provided a third layer formed of n-type GaN doped with Si at a high concentration and exhibiting favorable crystallinity. |
