EDGE TERMINATION STRUCTURE FOR POWER SEMICONDUCTOR DEVICES

摘要

PURPOSE: An edge termination structure for a power semiconductor device is provided to reduce the inactive part of the termination region for a power semiconductor device. CONSTITUTION: An epitaxial layer(110) is formed on a semiconductor substrate(105). An active trench(120) is formed in the epitaxial layer. A mask(115) is formed on the upper surface of the epitaxial layer. A peripheral trench(122) includes a dielectric material, an insulating material, a semi-insulating material, a conductive material or their combination. The peripheral trench and the active trench are formed at the same time. A sidewall dopant region(125) is formed in the epitaxial layer adjacent to the sidewall of the active trench. [Reference numerals] (110) Epi;