发明名称 |
Controlled localized defect paths for resistive memories |
摘要 |
Controlled localized defect paths for resistive memories are described, including a method for forming controlled localized defect paths including forming a first electrode forming a metal oxide layer on the first electrode, masking the metal oxide to create exposed regions and concealed regions of a surface of the metal oxide, and altering the exposed regions of the metal oxide to create localized defect paths beneath the exposed regions.
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申请公布号 |
US8420478(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US20090610131 |
申请日期 |
2009.10.30 |
申请人 |
CHIANG TONY;PHATAK PRASHANT;MILLER MICHAEL;INTERMOLECULAR, INC. |
发明人 |
CHIANG TONY;PHATAK PRASHANT;MILLER MICHAEL |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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