发明名称 |
Non-volatile memory with active ionic interface region |
摘要 |
An example memory cell may have at least a tunneling region disposed between a conducting region and a metal region, wherein the tunneling region can have at least an active interface region disposed between a first tunneling barrier and a second tunneling barrier. A high resistive film is formed in the interface region with migration of ions from both the metal and conducting regions responsive to a write current to program the memory cell to a selected resistive state. |
申请公布号 |
US8421048(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US20090501689 |
申请日期 |
2009.07.13 |
申请人 |
VAITHYANATHAN VENUGOPALAN;SIEGERT MARKUS JAN PETER;TIAN WEI;BALAKRISHNAN MURALIKRISHNAN;JIN INSIK;SEAGATE TECHNOLOGY LLC |
发明人 |
VAITHYANATHAN VENUGOPALAN;SIEGERT MARKUS JAN PETER;TIAN WEI;BALAKRISHNAN MURALIKRISHNAN;JIN INSIK |
分类号 |
H01L29/02;H01L45/00 |
主分类号 |
H01L29/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|