发明名称 |
Bulk fin-field effect transistors with well defined isolation |
摘要 |
A fin field-effect-transistor fabricated by forming a dummy fin structure on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate. The dielectric layer surrounds the dummy fin structure. The dummy fin structure is removed to form a cavity within the dielectric layer. The cavity exposes a portion of the semiconductor substrate thereby forming an exposed portion of the semiconductor substrate within the cavity. A dopant is implanted into the exposed portion of the semiconductor substrate within the cavity thereby creating a dopant implanted exposed portion of the semiconductor substrate within the cavity. A semiconductor layer is epitaxially grown within the cavity atop the dopant implanted exposed portion of the semiconductor substrate.
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申请公布号 |
US8420459(B1) |
申请公布日期 |
2013.04.16 |
申请号 |
US201113277956 |
申请日期 |
2011.10.20 |
申请人 |
CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;PONOTH SHOM;STANDAERT THEODORUS E.;YAMASHITA TENKO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;PONOTH SHOM;STANDAERT THEODORUS E.;YAMASHITA TENKO |
分类号 |
H01L21/00;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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地址 |
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