| 摘要 |
An object is to provide a semiconductor device with improved reliability in which a defect stemming from an end portion of a semiconductor layer provided in an island shape is prevented, and a manufacturing method thereof. Over a substrate having an insulating surface, an island-shaped semiconductor layer is formed, a first alteration treatment is performed, a first insulating film is formed on a surface of the island-shaped semiconductor layer, the first insulating film is removed, a second alteration treatment is performed on the island-shaped semiconductor from which the first insulating film is removed, a second insulating film is formed on a surface of the island-shaped semiconductor layer, and a conductive layer is formed over the second insulating film. An upper end portion of the island-shaped semiconductor layer has curvature by the first alteration treatment and the second alteration treatment.
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