Semiconductor integrated circuit device and method for fabricating the same

摘要

A semiconductor integrated circuit device is made by stacking a plurality of semiconductor chips. The semiconductor integrated circuit device includes: a penetrating electrode formed to penetrate the plurality of semiconductor chips; a plurality of electrodes formed in respective layers constituting each of the plurality of semiconductor chips and having respective openings within which the penetrating electrode penetrates; and a plurality of vias each of which electrically connects electrodes of the plurality of electrodes located in adjacent layers. The vias are each formed so that the side face thereof is in contact with the penetrating electrode.