发明名称 |
Semiconductor device and fabrication thereof |
摘要 |
A method for forming a semiconductor device is disclosed. A substrate including a gate dielectric layer and a gate electrode layer sequentially formed thereon is provided. An offset spacer is formed on sidewalls of the gate dielectric layer and the gate electrode layer. A carbon spacer is formed on a sidewall of the offset spacer, and the carbon spacer is then removed. The substrate is implanted to form a lightly doped region using the gate electrode layer and the offset spacer as a mask. The method may also include providing a substrate having a gate dielectric layer and a gate electrode layer sequentially formed thereon. A liner layer is formed on sidewalls of the gate electrode layer and on the substrate. A carbon spacer is formed on a portion of the liner layer adjacent the sidewall of the gate electrode layer. A main spacer is formed on a sidewall of the carbon spacer. The carbon spacer is removed to form an opening between the liner layer and the main spacer. The opening is sealed by a sealing layer to form an air gap.
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申请公布号 |
US8421166(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US201113175443 |
申请日期 |
2011.07.01 |
申请人 |
CHI MIN-HWA;CHIANG WEN-CHUAN;CHIANG MU-CHI;CHEN CHENG-KU;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHI MIN-HWA;CHIANG WEN-CHUAN;CHIANG MU-CHI;CHEN CHENG-KU |
分类号 |
H01L21/02;H01L21/76;H01L27/118 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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