发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device includes a first bump that is located over a surface of a semiconductor element, and is formed on a first bump formation face distanced from a back surface of the semiconductor element at a first distance, and a second bump that is located over the surface of the semiconductor element, and is formed on a second bump formation face distanced from the back surface of the semiconductor element at a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump.
申请公布号 US8420444(B2) 申请公布日期 2013.04.16
申请号 US201113028419 申请日期 2011.02.16
申请人 TANI MOTOAKI;IIJIMA SHINYA;SUGIURA SHINICHI;WATANABE HIROMICHI;FUJITSU LIMITED;FUJITSU TEN LIMITED 发明人 TANI MOTOAKI;IIJIMA SHINYA;SUGIURA SHINICHI;WATANABE HIROMICHI
分类号 H01L23/492;H01L21/52;H01L23/498 主分类号 H01L23/492
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