发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device includes a first bump that is located over a surface of a semiconductor element, and is formed on a first bump formation face distanced from a back surface of the semiconductor element at a first distance, and a second bump that is located over the surface of the semiconductor element, and is formed on a second bump formation face distanced from the back surface of the semiconductor element at a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump.
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申请公布号 |
US8420444(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US201113028419 |
申请日期 |
2011.02.16 |
申请人 |
TANI MOTOAKI;IIJIMA SHINYA;SUGIURA SHINICHI;WATANABE HIROMICHI;FUJITSU LIMITED;FUJITSU TEN LIMITED |
发明人 |
TANI MOTOAKI;IIJIMA SHINYA;SUGIURA SHINICHI;WATANABE HIROMICHI |
分类号 |
H01L23/492;H01L21/52;H01L23/498 |
主分类号 |
H01L23/492 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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