发明名称 Method for manufacturing semiconductor device
摘要 An object is to provide a highly reliable semiconductor device that has tolerance to external stress and electrostatic discharge. Another object is to prevent defective shapes and defective characteristics due to the external stress or an electrostatic discharge in the manufacturing process, and to manufacture a semiconductor device with high yield. Still another object is to manufacture a semiconductor device at low cost and with high productivity. With the use of a conductive shield, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit is prevented. The conductive shield is formed so that at least the conductive shields on the top and bottom surfaces are electrically connected by a plating method. In addition, a semiconductor device can be formed at low cost with high productivity because a plating method is used for the formation of the conductive shield.
申请公布号 US8420409(B2) 申请公布日期 2013.04.16
申请号 US201113288207 申请日期 2011.11.03
申请人 GOTO YUUGO;FUJII TERUYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 GOTO YUUGO;FUJII TERUYUKI
分类号 H01L21/00 主分类号 H01L21/00
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