发明名称 |
Semiconductor device having sense amplifier |
摘要 |
For example, four driver transistors are arranged in wells so as to adjoin both sides of each of two element isolation regions. Two pairs of cross-coupled sense transistors are arranged in the wells at positions farther from the element isolation regions than the driver transistors are. Such an arrangement provides more than a certain distance between the sense transistors and the respective corresponding element isolation regions. This reduces the effect of a phenomenon that threshold of a transistor varies according to a distance from an element isolation region. As a result, it is possible to exactly match the characteristics of each pair of cross-coupled transistors. |
申请公布号 |
US8422326(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US201113304040 |
申请日期 |
2011.11.23 |
申请人 |
FUJISAWA HIROKI;TAKISHITA RYUUJI;ELPIDA MEMORY, INC. |
发明人 |
FUJISAWA HIROKI;TAKISHITA RYUUJI |
分类号 |
G11C7/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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