发明名称 |
Method for forming buried cavities within a semiconductor body, and semiconductor body thus made |
摘要 |
A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches. |
申请公布号 |
US8420428(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US20100873685 |
申请日期 |
2010.09.01 |
申请人 |
BARLOCCHI GABRIELE;CORONA PIETRO;FARALLI DINO;VILLA FLAVIO FRANCESCO;STMICROELECTRONICS S.R.L. |
发明人 |
BARLOCCHI GABRIELE;CORONA PIETRO;FARALLI DINO;VILLA FLAVIO FRANCESCO |
分类号 |
H01L21/00;H01L21/76 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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