3D STRUCTURED NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A nonvolatile memory device of a three dimensional structure and a manufacturing method thereof are provided to improve a retention property and to increase an erase speed of a memory device by doping a charge trap layer with impurities. CONSTITUTION: A plurality of word lines(21) and a plurality of interlayer dielectric layers(22) are alternatively laminated. A channel(25) passes through a plurality of the word lines and a plurality of the interlayer dielectric layers. A tunnel insulation layer(24) surrounds the channel. A plurality of first charge trap layers(23A) is interposed between the plurality of word lines and the tunnel insulation layer. A plurality of the charge trap layers is doped with impurities. A plurality of second charge trap layers(23B) is interposed between the plurality of interlayer dielectric layers and the tunnel insulation layer. A plurality of charge blocking layers(27) is interposed between a plurality of the word lines and a plurality of the first charge trap layers.