| 摘要 |
<p>PURPOSE: A nonvolatile memory device and a capacitor are provided to prevent charges stored in a memory layer from being discharged in a low field condition by locating a charge movement blocking layer between the memory layer and a tunnel insulation layer or on the inner side of the tunnel insulation layer. CONSTITUTION: A memory layer(12) includes a first nanodot. A tunnel insulation layer(11) is interposed between a channel layer and the memory layer. A charge blocking layer(13) is interposed between the memory layer and a gate electrode(15). A charge movement blocking layer(16) is located on the inner side of the tunnel insulation layer, the inner side of the charge blocking layer, or an interface between the tunnel insulation layer and the memory layer. The charge movement blocking layer includes a second nanodot.</p> |
