发明名称 DEPOSITION APPARATUS AND DEPOSITION MATERIAL SUPPLY METHOD
摘要 <p>A deposition apparatus capable of suppressing pressure increase and temperature increase within a vapor generation unit and precisely controlling the temperature. A deposition apparatus for performing deposition treatment on a glass substrate (G) is provided with: a treatment chamber (5) which houses the glass substrate (G); a vapor generation unit (1) which generates vapor of a deposition material by heating the deposition material; a carrier path (21) for carrying the vapor of the deposition material generated by the vapor generation unit (1), together with carrier gas, to the treatment chamber (5); an exhaust path (22), a regulation valve device (31) which is provided in the middle of the carrier path; an exhaust valve device (32) which is provided in the middle of the exhaust path (22); a material temperature detection unit (64) which detects the temperature of the vapor generation unit (1); a first vapor amount detection unit (23), and a control unit (8) which, when the deposition material is heated, controls the opening/closing operation of the exhaust valve device (32) according to the level of the temperature of the vapor generation unit (1), and when the deposition material is carried to the treatment chamber, closes the exhaust valve device (32) and opens the regulation valve device (31) when the vapor amount detected by the first vapor amount detection unit (23) is stabilized.</p>
申请公布号 KR20130037232(A) 申请公布日期 2013.04.15
申请号 KR20137008532 申请日期 2011.10.03
申请人 TOKYO ELECTRON LIMITED 发明人 ONO YUJI;HAYASHI TERUYUKI;KANEKO HIROSHI
分类号 C23C14/24;H01L51/50 主分类号 C23C14/24
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