发明名称 |
SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE |
摘要 |
A semiconductor device includes an oxide semiconductor film in which a channel portion is formed and a gate portion arranged to be opposed to the channel portion. A drain portion in which the oxide semiconductor film has been subjected to resistance reduction process and an intermediate area which is provided between the drain portion and the channel portion and has not been subjected to resistance reduction process are formed in the oxide semiconductor film, and the semiconductor device includes a conductive film to block resistance reduction process to the intermediate area at least at a part. |
申请公布号 |
KR101254469(B1) |
申请公布日期 |
2013.04.15 |
申请号 |
KR20127029563 |
申请日期 |
2011.01.26 |
申请人 |
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发明人 |
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分类号 |
G02F1/1368;H01L21/336;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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