摘要 |
PURPOSE: A semiconductor memory device and a driving method thereof are provided to minimize power consumption by selectively disabling unused buffers according to a burst length in a write operation mode. CONSTITUTION: A plurality of address input units receive a plurality of addresses related to a burst ordering. A control circuit(300) selectively disables the plurality of address input units based on burst length information in a write operation mode. A control signal generating unit(310) generates a control signal which is activated for a preset section in response to the burst length information, a write command, column address strobe write latency information, and a clock. An enable signal generating unit(320) generates a plurality of enable signals whose activation sections are limited according to the control signal and the burst length information and provide the enable signals to each address input unit. [Reference numerals] (200) Command decoder; (310) Control signal generating unit; (320) Enable signal generating unit; |