| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the resistance of a gate line by forming a silicide layer as a part of the gate line. CONSTITUTION: A first insulation layer(215), an etch stop layer(219), and a second insulation layer(221) are successively formed on the upper side of a structure with a first gate line and a second gate line. The etch stop layer and a part of the second insulation layer are removed to expose the first insulation layer. The first insulation layer is etched between the first gate line and the second gate line to expose a silicon layer(209) after the first insulation layer, the second insulation layer, and the etch stop layer are blocked between the second gate lines by a mask pattern(250). After the mask pattern is removed, a silicide layer is formed on the exposed part of the silicon layer by a silicide process.</p> |
