A FINFET DEVICE AND METHOD OF MANUFACTURING SAME

摘要

PURPOSE: A FinFET device and a manufacturing method thereof are provided to improve carrier mobility in a current direction of a channel region by including a source and drain feature unit with a large area which is not disconnected. CONSTITUTION: A fin structure with one or more fins is formed on a substrate(104). An insulation material is deposited on the fin structure(106). A part of the insulation material is removed to expose a part of each fin in the fin structure(108). A gate structure is formed on the exposed part of each fin in the fin structure(110). The gate structure separates a source region from a drain region of a semiconductor device. The insulation material is removed from the source and drain regions(112). A source and drain feature unit is formed on the source and drain regions(114). [Reference numerals] (102) Providing a substrate; (104) Forming a fin structure on the substrate; (106) Depositing an insulation material on the fin structure; (108) Etching a part of the insulation material to expose a part of the fin structure; (110) Forming a gate structure on the fin structure; (112) Etching the insulation material in a source and drain region; (114) Forming a semiconductor material in the source and drain region; (116) Completing fabrication;