| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-speed and low-cost method for forming a film of amorphous (non-crystal) silicon carbide for an anode and a film of amorphous silicon nitride for a cathode for a solid electrolyte type secondary battery such that silicon compounds are adopted for the anode and cathode. <P>SOLUTION: Adopted as a method for forming, at a high speed, a film of amorphous(non-crystal) SiC for an anode, and a film of amorphous(non-crystal) Si<SB POS="POST">3</SB>N<SB POS="POST">4</SB>for a cathode on a substrate 6 having electrode leads of metal is a high-frequency(UHF band>300 MHz) film formation method by means of an atmospheric pressure plasma CVD(chemical vapor deposition). According to the method, an RF power source 10 of e.g. 550 MHz(UHF band) higher than a power source frequency generally used for plasma excitation is used to generate stable glow plasma 4, whereby high-density reaction species are produced and used. In this way, it becomes possible to generate high-density plasma in a small gap between the electrode 3 and the substrate 7 and thus, high-speed film formation can be achieved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
