| 摘要 |
The present invention relates to a semiconductor device including nanodots and a capacitor. A semiconductor device includes a channel layer, a tunnel insulating layer formed on the channel layer, a memory layer formed on the tunnel insulating layer and including first nanodots, a charge blocking layer formed on the memory layer, a gate electrode conductive layer formed on the charge blocking layer, and a buffer layer located, at least one of, inside the tunnel insulating layer, inside the charge blocking layer, at an interface between the tunnel insulating layer and the memory layer and at the interface between the charge blocking layer and the memory layer, wherein the buffer layer includes second nanodots.
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