发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
The semiconductor integrated circuit device has a hybrid substrate structure which includes both of an SOI structure and a bulk structure on the side of the device plane of a semiconductor substrate. In the device, the height of a gate electrode of an SOI type MISFET is higher than that of a gate electrode of a bulk type MISFET with respect to the device plane.
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申请公布号 |
US2013087855(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201213620986 |
申请日期 |
2012.09.15 |
申请人 |
MAKIYAMA HIDEKI;YAMAMOTO YOSHIKI;RENESAS ELECTRONICS CORPORATION |
发明人 |
MAKIYAMA HIDEKI;YAMAMOTO YOSHIKI |
分类号 |
H01L27/12;H01L21/84 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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