发明名称 |
Method for Reducing Forming Voltage in Resistive Random Access Memory |
摘要 |
Methods for producing RRAM resistive switching elements having reduced forming voltage include preventing formation of interfacial layers, and creating electronic defects in a dielectric film. Suppressing interfacial layers in an electrode reduces forming voltage. Electronic defects in a dielectric film foster formation of conductive pathways.
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申请公布号 |
US2013089949(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201213673504 |
申请日期 |
2012.11.09 |
申请人 |
INTERMOLECULAR INC.;INTERMOLECULAR INC. |
发明人 |
PHATAK PRASHANT B.;KUSE RONALD J.;TONG JINHONG |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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