METHOD FOR FORMING ELCTRODE OF HETERO-JUNCTION WITH INTRINSIC THIN LAYER SOLAR CELL DEVICE

摘要

PURPOSE: A method for forming a heterojunction solar cell is provided to reduce an electrode area by selectively depositing copper with a low resistance. CONSTITUTION: The front and the rear of an n-type Si layer are textured. An intrinsic amorphous Si layer(110) is formed on the front or the rear of the n-type Si layer. A p-type amorphous Si layer is formed on the front or the rear of the intrinsic amorphous Si layer. A TCO layer(140) is formed on the front or the rear of the p-type amorphous Si layer. A seed layer(150) is formed on the front and the rear of the p-type amorphous Si layer. Copper is formed by a simultaneous deposition method and a cap is deposited. An annealing process and an edge isolation process are performed.